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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB995 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ IC= -4A *Complement to Type 2SD1355 APPLICATIONS *Power amplifier applications. *Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE -100 V -100 V -5 V -5 A -0.5 A UNIT .cn mi e IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 40 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB995 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V VBE(on) ICBO IEBO Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V A Collector Cutoff Current VCB= -100V; IE= 0 VEB= -5V; IC= 0 -100 Emitter Cutoff Current -1.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications R 40-80 O 70-140 w Y ww scs .i IC= -4A; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -5V .cn mi e 40 20 240 270 pF 5 MHz 120-240 isc Websitewww.iscsemi.cn 2 |
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